Datasheet

TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP110 / TIP111 / TIP112 Rev. 1.1.0 2
Thermal Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Electrical Characteristics
(1)
Values are at T
C
= 25°C unless otherwise noted.
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Value Unit
P
C
Collector Dissipation (T
A
= 25°C) 2
W
Collector Dissipation (T
C
= 25°C) 50
Symbol Parameter Conditions Min. Max. Unit
V
CEO
(sus)
Collector-Emitter Sustaining
Voltage
TIP110
I
C
= 30 mA, I
B
= 0
60
V TIP111 80
TIP112 100
I
CEO
Collector Cut-Off Current
TIP110 V
CE
= 30 V, I
B
= 02
mA TIP111 V
CE
= 40 V, I
B
= 02
TIP112 V
CE
= 50 V, I
B
= 02
I
CBO
Collector Cut-Off Current
TIP110 V
CB
= 60 V, I
E
= 0 1
mA TIP111 V
CB
= 80 V, I
E
= 0 1
TIP112 V
CB
= 100 V, I
E
= 0 1
I
EBO
Emitter Cut-Off Current V
EB
= 5 V, I
C
= 0 2 mA
h
FE
DC Current Gain
V
CE
= 4 V, I
C
= 1 A 1000
V
CE
= 4 V, I
C
= 2 A 500
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 2 A, I
B
= 8 mA 2.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 4 V, I
C
= 2 A 2.8 V
C
ob
Output Capacitance
V
CB
= 10 V, I
E
= 0,
f = 0.1 MHz
100 pF