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TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor

TIP110 / TIP111 / TIP112 Rev. 1.1.0

November 2014

TIP110 / TIP111 / TIP112

NPN Epitaxial Silicon Darlington Transistor

Features

• Monolithic Construction with Built-in Base-Emitter

Shunt Resistors

• Complementary to TIP115 / TIP116 / TIP117

• High DC Current Gain:

= 1000 @ V

= 4 V, I

= 1 A (Minimum)

• Low Collector-Emitter Saturation Voltage

• Industrial Use

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

TIP110 TIP110 TO-220 3L (Single Gauge) Bulk

TIP110TU TIP110 TO-220 3L (Single Gauge) Rail

TIP111TU TIP111 TO-220 3L (Single Gauge) Rail

TIP112 TIP112 TO-220 3L (Single Gauge) Bulk

TIP112TU TIP112 TO-220 3L (Single Gauge) Rail

Symbol Parameter Value Unit

CBO

Collector-Base Voltage

TIP110 60

VTIP111 80

TIP112 100

CEO

Collector-Emitter Voltage

TIP110 60

VTIP111 80

TIP112 100

EBO

Emitter-Base Voltage 5 V

Collector Current (DC) 2 A

Collector Current (Pulse) 4 A

Base Current (DC) 50 mA

Junction Temperature 150 °C

STG

Storage Temperature Range -65 to 150 °C

1.Base 2.Collector 3.Emitter

TO-220

Equivalent Circuit

R1 10kΩ≅

R2 0.6kΩ≅

Summary of content (5 pages)

PAGE 1
TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor Equivalent Circuit Features C • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • Complementary to TIP115 / TIP116 / TIP117 • High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 1 A (Minimum) • Low Collector-Emitter Saturation Voltage • Industrial Use B 1 TO-220 R1 1.Base 2.Collector 3.Emitter R2 R1 ≅ 10kΩ R2 ≅ 0.
PAGE 2
Values are at TC = 25°C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TA = 25°C) 2 Collector Dissipation (TC = 25°C) 50 Unit W Electrical Characteristics(1) Values are at TC = 25°C unless otherwise noted. Symbol Parameter Conditions TIP110 VCEO(sus) Collector-Emitter Sustaining Voltage ICBO Collector Cut-Off Current Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE DC Current Gain Max. Unit 60 TIP111 IC = 30 mA, IB = 0 TIP112 ICEO Min.
PAGE 3
10000 IB = 500μA 1.8 IB = 450μA 1.6 IB = 400μA μA 350 I B= 00μA IB = 3 VCE = 4V 0μA I B = 25 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 2.0 1.4 1.2 IB = 200μA 1.0 0.8 0.6 IB = 150μA 0.4 1000 100 0.2 10 0.01 0.0 0 1 2 3 4 5 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 10 Figure 2. DC Current Gain 1000 100 IC = 500 IB f = 0.
PAGE 4
TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor Physical Dimensions Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB © 2001 Fairchild Semiconductor Corporation TIP110 / TIP111 / TIP112 Rev. 1.1.0 www.fairchildsemi.
PAGE 5
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