Datasheet

TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP110/TIP111/TIP112 Rev. 1.0.0 2
Electrical Characteristics* T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage
: TIP110
: TIP111
: TIP112
I
C
= 30mA, I
B
= 0 60
80
100
V
V
V
I
CEO
Collector Cut-off Current
: TIP110
: TIP111
: TIP112
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
2
2
2
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP110
: TIP111
: TIP112
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
1
1
1
mA
mA
mA
I
EBO
Emitter Cut-off Current V
BE
= 5V, I
C
= 0 2 mA
h
FE
DC Current Gain V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 2A
1000
500
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 2A, I
B
= 8mA 2.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 4V, I
C
= 2A 2.8 V
C
ob
Output Capacitance V
CB
= 10V, I
E
= 0, f =
0.1MHz
100 pF