Datasheet

TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP110/TIP111/TIP112 Rev. 1.0.0 1
November 2008
TIP110/TIP111/TIP112
NPN Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• Complementary to TIP115/116/117
• High DC Current Gain : h
FE
=1000 @ V
CE
=4V, I
C
=1A(Min.)
• Low Collector-Emitter Saturation Voltage
• Industrial Use
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage : TIP110
: TIP111
: TIP112
60
80
100
V
V
V
V
CEO
Collector-Emitter Voltage : TIP110
: TIP111
: TIP112
60
80
100
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 2 A
I
CP
Collector Current (Pulse) 4 A
I
B
Base Current (DC) 50 mA
P
C
Collector Dissipation (T
a
=25°C) 2 W
Collector Dissipation (T
C
=25°C) 50 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
1.Base 2.Collector 3.Emitter
1
TO-220
Equivalent Circuit
B
E
C
R1 R2
R1 10k W@
R2 0.6 k W@