Datasheet

TIP105/TIP106/TIP107 — PNP Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP105/TIP106/TIP107 Rev. 1.0.0 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -2 -3 -4 -5
-0
-1
-2
-3
-4
-5
I
B
= -800mA
I
B
= -900mA
I
B
= -1000mA
I
B
= -700mA
I
B
= -600mA
I
B
= -500mA
I
B
= -400mA
I
B
= -300mA
I
B
= -200mA
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10
100
1k
10k
V
CE
= -4V
h
FE
, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-100
-1k
-10k
-100k
I
C
= 500 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
1
10
100
1k
10k
f = 0.1 MHz
I
E
= 0
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
-100
TIP106
TIP107
TIP105
5
m
s
1
0
0
m
s
1ms
D
C
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
90
100
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE