Datasheet

TIP105/TIP106/TIP107 — PNP Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP105/TIP106/TIP107 Rev. 1.0.0 2
Electrical Characteristics* T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage
: TIP105
: TIP106
: TIP107
I
C
= -30mA, I
B
= 0 -60
-80
-100
V
V
V
I
CEO
Collector Cut-off Current
: TIP105
: TIP106
: TIP107
V
CE
= -30V, I
B
= 0
V
CE
= -40V, I
B
= 0
V
CE
= -50V, I
B
= 0
-50
-50
-50
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP105
: TIP106
: TIP107
V
CB
= -60V, I
E
= 0
V
CB
= -80V, I
E
= 0
V
CB
= -100V, I
E
= 0
-50
-50
-50
mA
mA
mA
I
EBO
Emitter Cut-off Current V
BE
= -5V, I
C
= 0 -2 mA
h
FE
DC Current Gain V
CE
= -4V, I
C
= -3A
V
CE
= -4V, I
C
= -8A
1000
200
20000
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -3A, I
B
= -6mA
I
C
= -8A, I
B
= -80mA
-2
-2.5
V
V
V
BE
(on) Base-Emitter On Voltage V
CE
= -4V, I
C
= -8A -2.8 V
C
ob
Output Capacitance V
CB
= -10V, I
E
= 0, f =
0.1MHz
300 pF