Datasheet

TIP105/TIP106/TIP107 — PNP Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP105/TIP106/TIP107 Rev. 1.0.0 1
October 2008
TIP105/TIP106/TIP107
PNP Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : h
FE
=1000 @ V
CE
= -4V, I
C
= -3A (Min.)
• Collector-Emitter Sustaining Voltage
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP100/101/102
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage : TIP105
: TIP106
: TIP107
- 60
- 80
- 100
V
V
V
V
CEO
Collector-Emitter Voltage : TIP105
: TIP106
: TIP107
- 60
- 80
- 100
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 8 A
I
CP
Collector Current (Pulse) - 15 A
I
B
Base Current (DC) - 1 A
P
C
Collector Dissipation (T
a
=25°C) 2 W
Collector Dissipation (T
C
=25°C) 80 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
1.Base 2.Collector 3.Emitter
1
TO-220
R1 10kW@
R2 0.6 kW@
Equivalent Circuit
B
E
C
R1
R2