Datasheet

TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP100/TIP101/TIP102 Rev. 1.0.0 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0 1 2 3 4 5
0
1
2
3
4
5
0.8mA
0.9mA
I
B
= 1mA
7
0
0
m
A
6
0
0
m
A
5
0
0
m
A
4
0
0
m
A
I
B
= 300mA
I
B
= 200mA
I
B
= 100mA
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10
100
1k
10k
V
CE
= 4V
h
FE
, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
0.1 1 10 100
100
1k
10k
I
C
= 500 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1k
10k
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
0.01
0.1
1
10
100
TIP102
TIP101
5
m
s
1
0
0
m
s
1ms
D
C
TIP100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE