Datasheet

TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP100/TIP101/TIP102 Rev. 1.0.0 2
Electrical Characteristics* T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage
: TIP100
: TIP101
: TIP102
I
C
= 30mA, I
B
= 0 60
80
100
V
V
V
I
CEO
Collector Cut-off Current
: TIP100
: TIP101
: TIP102
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
50
50
50
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP100
: TIP101
: TIP102
V
CE
= 60V, I
E
= 0
V
CE
= 80V, I
E
= 0
V
CE
= 100V, I
E
= 0
50
50
50
mA
mA
mA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 2 mA
h
FE
DC Current Gain V
CE
= 4V, I
C
= 3A
V
CE
= 4V, I
C
= 8A
1000
200
20000
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 3A, I
B
= 6mA
I
C
= 8A, I
B
= 80mA
2
2.5
V
V
V
BE
(on) Base-Emitter On Voltage V
CE
= 4V, I
C
= 8A 2.8 V
C
ob
Output Capacitance V
CB
= 10V, I
E
= 0, f =
0.1MHz
200 pF