Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
SS9014
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage 50 V
V
CEO
Collector-Emitter Voltage 45 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 100 mA
P
C
Collector Power Dissipation 450 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=100µA, I
E
=0 50 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=1mA, I
B
=0 45 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=100µA, I
C
=0 5 V
I
CBO
Collector Cut-off Current V
CB
=50V, I
E
=0 50 nA
I
EBO
Emitter Cut-off Current V
EB
=5V, I
C
=0 50 nA
h
FE
DC Current Gain V
CE
=5V, I
C
=1mA 60 280 1000
V
CE
(sat) Collector-Base Saturation Voltage I
C
=100mA, I
B
=5mA 0.14 0.3
V
BE
(sat) Base-Emitter Saturation Voltage I
C
=100mA, I
B
=5mA 0.84 1.0 V
V
BE
(on) Base-Emitter On Voltage V
CE
=5V, I
C
=2mA 0.58 0.63 0.7 V
C
ob
Output Capacitance V
CB
=10V, I
E
=0
f=1MHz
2.2 3.5 pF
f
T
Current Gain Bandwidth Product V
CE
=5V, I
C
=10mA 150 270 MHz
NF Noise Figure V
CE
=5V, I
C
=0.2mA
f=1KHz, R
S
=2KΩ
0.9 10 dB
Classification A B C D
h
FE
60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000
1. Emitter 2. Base 3. Collector
SS9014
Pre-Amplifier, Low Level & Low Noise
• High total power dissipation. (P
T
=450mW)
• High h
FE
and good linearity
• Complementary to SS9015
TO-92
1