Datasheet

SS8550 — 2W Output Amplifier of Portable Radios in Class B Push-pull Operation
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8550 Rev. 1.0.0 1
March 2008
SS8550
2W Output Amplifier of Portable Radios in Class B Push-pull Operation
Features
• Complimentary to SS8050
• Collector Current: I
C
=1.5A
• Collector Power Dissipation: P
C
=1W (T
C
=25×C)
Absolute Maximum Ratings T
a
=25×C unless otherwise noted
Electrical Characteristics T
a
=25×C unless otherwise noted
h
FE
Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage -40 V
V
CEO
Collector-Emitter Voltage -25 V
V
EBO
Emitter-Base Voltage -6 V
I
C
Collector Current -1.5 A
P
C
Collector Power Dissipation 1 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100μA, I
E
=0 -40 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -2mA, I
B
=0 -25 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -100μA, I
C
=0 -6 V
I
CBO
Collector Cut-off Current V
CB
= -35V, I
E
=0 -100 nA
I
EBO
Emitter Cut-off Current V
EB
= -6V, I
C
=0 -100 nA
h
FE1
h
FE2
h
FE3
DC Current Gain V
CE
= -1V, I
C
= -5mA
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
45
85
40
170
160
80
300
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -800mA, I
B
= -80mA -0.28 -0.5 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -800mA, I
B
= -80mA -0.98 -1.2 V
V
BE
(on) Base-Emitter on Voltage V
CE
= -1V, I
C
= -10mA -0.66 -1.0 V
C
ob
Output Capacitance V
CB
= -10V, I
E
=0
f=1MHz
15 pF
f
T
Current Gain Bandwidth Product V
CE
= -10V, I
C
= -50mA 100 200 MHz
Classification B C D
h
FE2
85 ~ 160 120 ~ 200 160 ~ 300
1. Emitter 2. Base 3. Collector
TO-92
1