Datasheet

SS8050 — NPN Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8050 Rev. B3 1
July 2010
SS8050
NPN Epitaxial Silicon Transistor
Features
• 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: I
C
=1.5A
• Collector Power Dissipation: P
C
=2W (T
C
=25°C)
Absolute Maximum Ratings T
a
= 25°C unless otherwise noted
Electrical Characteristics T
a
= 25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 40 V
V
CEO
Collector-Emitter Voltage 25 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 1.5 A
P
C
Collector Power Dissipation 1 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
Symbol Parameter Conditions Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=100µA, I
E
=0 40 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=2mA, I
B
=0 25 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=100µA, I
C
=0 6 V
I
CBO
Collector Cut-off Current V
CB
=35V, I
E
=0 100 nA
I
EBO
Emitter Cut-off Current V
EB
=6V, I
C
=0 100 nA
h
FE1
h
FE2
h
FE3
DC Current Gain
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
45
85
40
300
V
CE (sat)
Collector-Emitter Saturation Voltage I
C
=800mA, I
B
=80mA 0.5 V
V
BE (sat)
Base-Emitter Saturation Voltage I
C
=800mA, I
B
=80mA 1.2 V
V
BE (on)
Base-Emitter On Voltage V
CE
=1V, I
C
=10mA 1 V
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 9.0 pF
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
=50mA 100 MHz
Classification B C D
h
FE2
85 ~ 160 120 ~ 200 160 ~ 300
1. Emitter 2. Base 3. Collector
TO-92
1