Datasheet

7/7/05
Page 2 of 6
© 2005 Fairchild Semiconductor Corporation
RIGHT ANGLE SURFACE
MOUNT INFRARED
PHOTOTRANSISTOR
QTLP610CPD
Notes:
1. At 25°C or below.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100µs, T = 10 ms.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-25 to +85 °C
Storage Temperature T
STG
-40 to +90 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec °C
Collector Emitter Voltage V
CE
30 V
Emitter Collector Voltage V
EC
5V
Power Dissipation
(1)
P
D
75 mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25°C)
PARAMETER
TEST CONDITIONS ( λ
P
= 940nm)
SYMBOL MIN. TYP. MAX. UNITS
Peak Sensitivity Wavelength λ PS — 860 — nm
Reception Angle Θ — ±80 — Deg.
Dark Current V
CE
= 20 V, Ee = 0 I
D
——100 nA
Collector-Emitter Breakdown I
C
= 100µA, Ee = 0 BV
CEO
30 — — V
Emitter-Collector Breakdown I
E
= 100µA, Ee = 0 BV
ECO
5——V
On-State Collector Current
Ee = 1 mW/cm
2
V
CE
= 5V
I
C(ON)
0.1 0.5 — mA
Saturation Voltage
Ee = 1 mW/cm
2
I
C
= 2mA
V
CE(SAT)
——0.4 V
Rise Time V
CE
= 5V, RL = 1000 Ω t
r
—15—µs
Fall Time I
C
= 1mA t
f
—15—µs