Datasheet

3
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage* I
C
= 3.0 mA, I
B
= 0 15 V
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
C
= 100
µ
A, V
BE
= 0
15 V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
µ
A, I
E
= 0
15 V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
µ
A, I
C
= 0
4.5 V
I
CBO
Collector Cutoff Current V
CB
= 8.0 V, I
E
= 0 10 nA
I
CES
Collector Cutoff Current V
CE
= 8.0 V, V
BE
= 0
V
CE
= 8.0 V, V
BE
= 0, T
A
= 125
°
C
10
5.0
nA
µ
A
I
EBO
Emitter Cutoff Current V
EB
= 4.5 V, I
C
= 0 1.0
µ
A
SMALL SIGNAL CHARACTERISTICS
ON CHARACTERISTICS*
h
FE
DC Current Gain I
C
= 1.0 mA, V
CE
= 0.5 V
I
C
= 10 mA, V
CE
= 0.3 V
I
C
= 10mA,V
CE
= 0.3V,T
A
= -55
°
C
I
C
= 50 mA, V
CE
= 1.0 V
35
50
20
40
120
V
CE(
sat
)
Collector-Emitter Saturation Voltage I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.15
0.18
0.6
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.75
0.8
0.95
1.5
V
V
V
C
cb
Collector-Base Capacitance V
CB
= 5.0 V, I
E
= 0,
f = 140 kHz
3.0 pF
C
eb
Emitter-Base Capacitance V
BE
= 0.5 V, I
C
= 0,
f = 140 kHz
3.5 pF
h
fe
Small-Signal Current Gain I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
8.5 MHz
SWITCHING CHARACTERISTICS
t
s
Storage Time I
C
= 10 mA, V
CC
= 1.5 V,
I
B1
= I
B2
= 1.0 mA
20 ns
t
on
Turn-On Time I
C
= 10 mA, V
CC
= 1.5 V,
I
B
= 1.0 mA
15 ns
t
off
Turn-Off Time I
C
= 10 mA, V
CC
= 1.5 V,
I
B1
= I
B2
= 1.0 mA
20 ns
PNP Switching Transistor
(continued)
2N5771 / MMBT5771
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.