Datasheet

2N5771 MMBT5771
PNP Switching Transistor
This device is designed for very high speed saturated switching
at collector currents to 100 mA. Sourced from Process 65. See
PN4258 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 15 V
V
CBO
Collector-Base Voltage 15 V
V
EBO
Emitter-Base Voltage 4.5 V
I
C
Collector Current - Continuous 200 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Symbol Characteristic Max Units
2N5771 *MMBT5771
P
D
Total Device Dissipation
Derate above 25
°
C
350
2.8
225
1.8
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case 125
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 357 556
°
C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: 3R
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N5771 / MMBT5771

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