Datasheet

©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003
2N5086/2N5087/MMBT5087
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Input and Output Capacitance
vs Reverse Voltag
0.01 0.03 0.1 0.3 1 3 10 30 100
50
10 0
15 0
20 0
25 0
30 0
35 0
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CB
β
β
0.1 1 10
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V - COLLECTOR EMITTER VOLTAGE (V)
C
CESAT
β
= 10
25
°
C
- 40
°
C
125
°
C
β
β
0.1 1 10 50
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTE R VOLTAGE (V)
C
BESAT
25 °C
- 40 °C
125 °C
β
= 10
β
β
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40 °C
125 °C
β
β
25 50 75 100 125
0.01
0.1
1
10
100
T - A MBIE NT TEMP ER ATUR E ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
°
V = 40V
CB
048121620
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
f = 1 MHz
C
obo
C
ibo
β
β