Datasheet

MMBT3906SL — PNP Epitaxial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3906SL Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base- Emitter Saturation Voltage Figure 4. Collector- Base Leakage Current
Figure 5. Collector- Base Capacitance Figure 6. Power Derating
1 10 100
10
100
Vce=1V
T
J
=25
o
C
T
J
=75
o
C
T
J
=125
o
C
T
J
=-25
o
C
Current Gain
Collector Current, [mA]
10 100
100
1000
Ic=10*Ib
T
J
=25
o
C
T
J
=75
o
C
T
J
=125
o
C
T
J
=-25
o
C
Collector-Emitter Voltage,[mV]
Collector Current, [mA]
10 100
100
1000
Ic=10*Ib
T
J
=-25
o
C
T
J
=25
o
C
T
J
=75
o
C
T
J
=125
o
C
Base- Emitter Voltage,[mV]
Collector Current, [mA]
10 20 30 40
1
10
100
T
J
=-25
o
C
T
J
=25
o
C
T
J
=75
o
C
T
J
=125
o
C
Base-Collector Leakage Current,[nA]
Base-Collector Revere Voltage, [V]
0510
6
8
9
11
12
f=1mhz
Base- Collector Juntion Capacitance, C
ob
[pF]
Base- Collector Reverse Voltage, V
cb
[V]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
Power Dissipation, [mW]
Ambient Temperature, T
a
[
o
C]