Datasheet

MMBT3906SL — PNP Epitaxial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3906SL Rev. 1.1.0 2
Electrical Characteristics* T
a
= 25C unless otherwise noted
* DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2%
Symbol Parameter Test Condition Min. Max. Unit
BV
CBO
Collector-Base Breakdown Voltage I
C
= -10A, I
E
= 0 -40 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -1mA, I
B
= 0 40 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10A, I
C
= 0 -5 V
I
CEX
Collector Cut-off Current V
CE
= -30V, V
EB(OFF)
= -0.3V -50 nA
h
FE
DC Current Gain V
CE
= 1V, I
C
= -0.1mA
V
CE
= 1V, I
C
= -1mA
V
CE
= 1V, I
C
= -10mA
V
CE
= 1V, I
C
= -50mA
V
CE
= 1V, I
C
= -100mA
60
80
100
60
30
300
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
-0.25
-0.4
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
-0.65 -0.85
-0.95
V
V
f
T
Current Gain Bandwidth Product V
CE
= -20V, I
C
= -10mA,
f = 100MHz
250 MHz
C
ob
Output Capacitance V
CB
= -5V, I
E
= 0, f = 1MHz 7.0 pF
C
ib
Input Capacitance V
EB
= -0.5V, I
C
= 0, f = 1MHz 15 pF
t
d
Delay Time V
CC
= -3V, I
C
= -10mA
I
B1
= - I
B2
= -1mA
35 ns
t
r
Rise Time 35 ns
t
s
Storage Time 225 ns
t
f
Fall Time 75 ns