Datasheet

MMBT3906SL — PNP Epitaxial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3906SL Rev. 1.1.0 1
August 2012
MMBT3906SL
PNP Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor
• Ultra small surface mount package for all types (max 0.43mm tall)
• Suitable for general switching & amplification
• Well suited for portable application
• As complementary type, NPN MMBT3904SL is recommended.
• Pb free
Absolute Maximum Ratings T
a
= 25°C unless otherwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics* T
a
= 25C unless otherwise noted
* Minimum land pad.
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage -40 V
V
CEO
Collector-Emitter Voltage -40 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current 200 mA
T
J
Junction Temperature 150 C
T
STG
Storage Temperature Range -55 ~ 150 C
Symbol Parameter Max Unit
P
C
Collector Power Dissipation, by R
JA
227 mW
R
JA
Thermal Resistance, Junction to Ambient 550 C/W
SOT-923F
Marking : AB
C
B
E
COLLECTOR
3
EMITTER
2
BASE
1