Datasheet

MJD45H11 — PNP Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD45H11 Rev. C3 2
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Safe Operating Area
Figure 3. Power Derating vs T
C
Figure 4. Power Derating vs T
A
-0.01 -0.1 -1 -10
1
10
100
1000
V
CE
= -1V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
-100
5
m
s
1
0
0
µ
s
5
0
0
µ
s
1
m
s
D
C
I
CP
(max)
I
C
(max)
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE
0 25 50 75 100 125 150 175
0
1
2
3
4
P
C
[W], POWER DISSIPATION
T
A
[
o
C], CASE TEMPERATURE