Datasheet

MJD45H11 — PNP Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD45H11 Rev. C3 1
April 2010
MJD45H11
PNP Epitaxial Silicon Transistor
Applications
• General Purpose Power and Switching Such as Output or Driver Stages in Applications
• D-PAK for Surface Mount Applications
Features
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK: “-I” Suffix)
• Electrically Similar to Popular MJE45H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Electrical Characteristics T
A
= 25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol
Parameter Value Units
V
CEO
Collector-Emitter Voltage - 80 V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 8 A
I
CP
Collector Current (Pulse) - 16 A
P
C
Collector Dissipation (T
C
=25°C) 20 W
Collector Dissipation (T
A
=25°C) 1.75 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 to +150 °C
Symbol
Parameter Test Condition Min.
Typ.
Max. Units
V
CEO
(sus) *Collector-Emitter Sustaining Voltage I
C
= - 30mA, I
B
= 0 - 80 V
I
CEO
Collector Cut-off Current V
CE
= - 80V, I
B
= 0 - 10 µA
I
EBO
Emitter Cut-off Current V
BE
= - 5V, I
C
= 0 - 50 µA
h
FE
*DC Current Gain
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 1V, I
C
= - 4A
60
40
V
CE
(sat) *Collector-Emitter Saturation Voltage I
C
= - 8A, I
B
= - 0.4A - 1 V
V
BE
(on) *Base-Emitter Saturation Voltage I
C
= - 8A, I
B
= - 0.8A - 1.5 V
f
T
Current Gain Bandwidth Product V
CE
= - 10A, I
C
= - 0.5A 40 MHz
C
ob
Collector Capacitance V
CB
= - 10V, f = 1MHz 230 pF
t
ON
Turn On Time
I
C
= - 5A
I
B1
= - I
B2
= - 0.5A
135 ns
t
STG
Storage Time 500 ns
t
F
Fall Time 100 ns
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11