Datasheet

MJD44H11 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD44H11 Rev. B1 3
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Safe Operating Area
Figure 3. Power Derating
0.01 0.1 1 10
1
10
100
1000
V
CE
= 1V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
5
m
s
1
0
0
μ
s
5
0
0
μ
s
1
m
s
D
C
I
CP
(max)
I
C
(max)
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE