Datasheet

MJD44H11 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD44H11 Rev. B1 2
Electrical Characteristics T
a
= 25°C unless otherwise noted
* Pulse Test: PW≤300μs, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) *Collector-Emitter Sustaining Voltage I
C
= 30mA, I
B
= 0 80 V
I
CEO
Collector Cut-off Current V
CE
= 80V, I
B
= 0 10 μA
I
EBO
Emitter Cut-off Current V
BE
= 5V, I
C
= 0 50 μA
h
FE
*DC Current Gain
V
CE
= 1V, I
C
= 2A
V
CE
= 1V, I
C
= 4A
60
40
V
CE
(sat) *Collector-Emitter Saturation Voltage I
C
= 8A, I
B
= 0.4A 1 V
V
BE
(on) *Base-Emitter On Voltage I
C
= 8A, I
B
= 0.8A 1.5 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 0.5A 50 MHz
C
ob
Output Capacitance V
CB
=10V, f = 1MHz 130 pF
t
ON
Turn On Time
I
C
= 5A
I
B1
= - I
B2
= 0.5A
300 ns
t
STG
Storage Time 500 ns
t
F
Fall Time 140 ns