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MJD44H11 — NPN Epitaxial Silicon Transistor

MJD44H11 Rev. B1 1

March 2009

MJD44H11

NPN Epitaxial Silicon Transistor

• General Purpose Power and Switching Such as Output or Driver Stages in Applications

• D-PAK for Surface Mount Applications

• Load Formed for Surface Mount Application (No Suffix)

• Straight Lead (I-PAK, "- I" Suffix)

• Electrically Similar to Popular MJE44H

• Fast Switching Speeds

• Low Collector Emitter Saturation Voltage

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Value Units

CEO

Collector-Emitter Voltage 80 V

EBO

Emitter-Base Voltage 5 V

Collector Current (DC) 8 A

Collector-Current (Pulse) 16 A

Junction Temperature 150 °C

STG

Storage Temperature - 65 ~ 150 °C

Symbol Parameter Max. Units

Total Device Dissipation

= 25°C

1.75

θJC

Thermal Resistance, Junction to Case 6.25 °C/W

θJA

Thermal Resistance, Junction to Ambient 71.4 °C/W

1.Base 2.Collector 3.Emitter

D-PAK I-PAK

Summary of content (5 pages)

PAGE 1
MJD44H11 NPN Epitaxial Silicon Transistor • • • • • • • General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation Voltage 1 D-PAK 1.Base 1 2.Collector I-PAK 3.
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Symbol Parameter Test Condition Min. Typ. Max. VCEO(sus) *Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 ICEO Collector Cut-off Current VCE = 80V, IB = 0 10 μA IEBO Emitter Cut-off Current VBE = 5V, IC = 0 50 μA hFE *DC Current Gain VCE = 1V, IC = 2A VCE = 1V, IC = 4A VCE(sat) *Collector-Emitter Saturation Voltage IC = 8A, IB = 0.4A 1 V VBE(on) *Base-Emitter On Voltage IC = 8A, IB = 0.8A 1.5 V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.
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100 1000 IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN VCE = 1V 100 10 ICP(max) 10 10 IC(max) 1 50 1m s 5m DC s 0μ 0μ s s 0.1 0.01 1 0.01 0.1 1 1 10 IC[A], COLLECTOR CURRENT 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. DC current Gain Figure 2. Safe Operating Area PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 3. Power Derating © 2009 Fairchild Semiconductor Corporation MJD44H11 Rev. B1 www.
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MJD44H11 — NPN Epitaxial Silicon Transistor Mechanical Dimensions ±0.10 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 0.50 MIN0.55 2.30TYP [2.30±0.20] 6.60 ±0.20 (5.34) (5.04) (1.50) ±0.10 (1.00) ±0.10 2.30 (0.90) 0.76 0.91 ±0.10 (0.50) 9.50 ±0.30 (4.34) 6.10 ±0.20 ±0.30 (0.70) 2.30TYP [2.30±0.20] 5.34 0.89 ±0.10 MAX0.96 ±0.20 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 6.60 0.70 ±0.20 D-PAK 0.76 ±0.
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