Datasheet

MJD31C — NPN Epitaxial Silicon Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD31C Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Capacitance Figure 4. Turn-On Time
Figure 5. Turn-Off Time Figure 6. Safe Operating Area
0.01 0.1 1 10
1
10
100
1000
V
CE
= 2V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR BASE VOLTAGE
0.01 0.1 1 10
0.1
1
t
R
, V
CC
=30V
t
R
, V
CC
=10V
t
C
= 10.I
B
t
D
, V
BE
(off)=2V
t
R
, t
D
[μs], TURN ON TIME
I
C
[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.1
1
t
STG
t
F
, V
CC
=30V
t
C
= 10.I
B
t
F
, V
CC
(off)=10V
t
F
,t
STG
[μs], TURN OFF TIME
I
C
[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
MJD31
1
0
0
μ
s
5
0
0
μ
s
MJD31C
1
m
s
D
C
I
CP
(max)
I
C
(max)
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE