Datasheet

MJD31C — NPN Epitaxial Silicon Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD31C Rev. 1.1.0 2
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Conditions Min. Typ. Max. Unit
V
CEO
(sus)
Collector-Emitter Sustaining
Voltage
(1)
I
C
= 30 mA, I
B
= 0 100 V
I
CEO
Collector Cut-Off Current V
CE
= 60 V, I
B
= 0 50 μA
I
CES
Collector Cut-Off Current V
CE
= 100 V, V
BE
= 0 20 μA
I
EBO
Emitter Cut-Off Current V
BE
= 5 V, I
C
= 0 1 mA
h
FE
DC Current Gain
(1)
V
CE
= 4 V, I
C
= 1 A 25
V
CE
= 4 V, I
C
= 3 A 10 50
V
CE
(sat)
Collector-Emitter Saturation
Voltage
(1)
I
C
= 3 A, I
B
= 375 mA 1.2 V
V
BE
(on) Base-Emitter On Voltage
(1)
V
CE
= 4 A, I
C
= 3 A 1.8 V
f
T
Current Gain Bandwidth Product V
CE
= 10 V, I
C
= 500 mA 3 MHz