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MJD31C — NPN Epitaxial Silicon Transistor

MJD31C Rev. 1.1.0 1

November 2013

MJD31C

NPN Epitaxial Silicon Transistor

Features

• General-Purpose Amplifier

• Low-Speed Switching Applications

• Lead Formed for Surface Mount Application (No Suffix)

• Straight Lead (I-PAK, “- I” Suffix)

• Electrically Similar to Popular TIP31 and TIP31C

Applications

• Switching Regulators

• Converters

• Power Amplifiers

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

MJD31CTF MJD31C TO-252 3L (DPAK) Tape and Reel

MJD31CITU MJD31C-I TO-251 3L (IPAK) Rail

Symbol Parameter Value Unit

CBO

Collector-Base Voltage 100 V

CEO

Collector-Emitter Voltage 100 V

EBO

Emitter-Base Voltage 5 V

Collector Current (DC) 3 A

Collector Current (Pulse) 5 A

Base Current 1 A

Collector Dissipation (T

= 25°C) 15.00

Collector Dissipation (T

= 25°C) 1.56

Junction Temperature 150 °C

STG

Storage Temperature - 65 to 150 °C

Description

Designed for general-purpose power and switching, such

as output or driver stages in applications.

1.Base 2.Collector 3.Emitter

D-PAK I-PAK

Summary of content (7 pages)

PAGE 1
MJD31C NPN Epitaxial Silicon Transistor Features Description • • • • • Designed for general-purpose power and switching, such as output or driver stages in applications. General-Purpose Amplifier Low-Speed Switching Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C Applications • Switching Regulators • Converters • Power Amplifiers D-PAK 1 1.Base I-PAK 1 2.Collector 3.
PAGE 2
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Collector-Emitter Sustaining VCEO(sus) Voltage(1) Conditions IC = 30 mA, IB = 0 Min. Typ. Max.
PAGE 3
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 2V 100 10 1 0.01 0.1 1 10 IC = 10 IB 1 VBE(sat) 0.1 VCE(sat) 0.01 1E-3 10 0.01 IC[A], COLLECTOR CURRENT 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 tR, tD [μs], TURN ON TIME Cob[pF], CAPACITANCE tC = 10.IB 100 10 1 tR, VCC=30V tR, VCC=10V 0.1 tD, VBE(off)=2V 1 0.1 1 10 100 0.01 0.
PAGE 4
MJD31C — NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) PC[W], POWER DISSIPATION 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating © 2001 Fairchild Semiconductor Corporation MJD31C Rev. 1.1.0 www.fairchildsemi.
PAGE 5
MJD31C — NPN Epitaxial Silicon Transistor Physical Dimensions TO-252 3L Figure 7. 3-LEAD, TO-252, JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK) (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 6
MJD31C — NPN Epitaxial Silicon Transistor Physical Dimensions (Continued) TO-251 3L D) TO251A03REVA. Figure 8. TO-251 (IPAK) MOLDED, 3-LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 7
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.