Datasheet

©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJD3055
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 70 V
V
CEO
Collector-Emitter Voltage 60 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 10 A
I
B
Base Current 6 A
P
C
Collector Dissipation (T
C
=25°C) 20 W
Collector Dissipation (T
a
=25°C) 1.75 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage I
C
= 30mA, I
B
= 0 60 V
I
CEO
Collector Cut-off Current V
CE
= 30V, I
E
= 0 50 µA
I
CBO
Collector Cut-off Current V
CB
= 70V, I
E
= 0 2 mA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 0.5 mA
h
FE
*DC Current Gain V
CE
= 4V, I
C
= 4A
V
CE
= 4V, I
C
= 10A
20
5
100
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 4A, I
B
= 0.4A
I
C
= 10A, I
B
= 3.3A
1.1
8
V
V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= 4V, I
C
= 4A 1.8 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 500mA 2 MHz
MJD3055
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ -I “ Suffix)
• Electrically Similar to Popular MJE3055T
• DC Current Gain Specified to 10A
• High Current Gain - Bandwidth Product:
f
T
= 2MHz (MIN), I
C
= 500mA
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
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