Datasheet

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MJD112 Rev. B
MJD112 NPN Silicon Darlington Transistor
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Safe Operating Area
0.01 0.1 1 10
10
100
1000
10000
V
CE
= 3V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
I
C
= 250 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.01 0.1 1 10
0.1
1
10
V
CC
=30V
I
C
=250I
B
t
D
t
R
t
R
,t
D
(µs), TURN ON TIME
I
C
[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.1
1
10
V
CC
=30V
I
C
=250I
B
t
F
t
STG
t
STG
,t
F
[µS], TURN OFF TIME
I
C
[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
5
m
s
100
µ
s
1
m
s
D
C
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE