Datasheet

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
MJD112 Rev. B
MJD112 NPN Silicon Darlington Transistor
tm
November 2006
MJD112
NPN Silicon Darlington Transistor
Features
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 100 V
V
CEO
Collector-Emitter Voltage 100 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 2 A
I
CP
Collector Current (Pulse) 4 A
I
B
Base Current 50 mA
P
C
Collector Dissipation (T
C
=25°C) 20 W
Collector Dissipation (T
a
=25°C) 1.75 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage I
C
= 30mA, I
B
= 0 100 V
I
CEO
Collector Cut-off Current V
CE
= 50V, I
B
= 0 20 µA
I
CBO
Collector Cut-off Current V
CB
= 100V, I
B
= 0 20 µA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 2 mA
h
FE
* DC Current Gain V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
500
1000
200
12K
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 2A, I
B
= 8mA
I
C
= 4A, I
B
= 40mA
2
3
V
V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= 4A, I
B
= 40mA 4 V
V
BE
(on) * Base-Emitter On Voltage V
CE
= 3A, I
C
= 2A 2.8 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 0.75A 25 MHz
C
ob
Output Capacitance V
CB
= 10V, I
E
= 0
f = 0.1MHz
100 pF
1.Base 2.Collector 3.Emitter
D-PAK
1
R1 10kΩ≅
R2 0.6kΩ≅
Equivalent Circuit
B
E
C
R1
R2