Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST5086/5087
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
Marking Code
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -50 V
V
CEO
Collector-Emitter Voltage -50 V
V
EBO
Emitter-Base Voltage -3 V
I
C
Collector Current -50 mA
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
=0 -50 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -1mA, I
B
=0 -50 V
I
CBO
Collector Cut-off Current V
CB
= -20V, I
E
=0 -50 nA
h
FE
DC Current Gain
: KST5086
: K S T 5 0 8 7
: KST5086
: KST5087
: KST5086
: KST5087
V
CE
= -5V, I
C
= -100µA
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -10mA
150
250
150
250
150
250
500
800
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA -0.3 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA -0.85 V
f
T
Current Gain Bandwidth Product V
CE
= -5V, I
C
= -500µA
f=20MHz
40 MHz
C
ob
Output Capacitance V
CB
= -5V, I
E
=0
f=100MHz
4pF
NF Noise Figure
: KST5086
: KST5087
: KST5087
I
C
= -100µA, V
CE
= -5V
R
S
=3KΩ, f=1KHz
V
CE
= -5V, I
C
= -20mA
R
S
=10KΩ, f=10Hz to 15.7KHz
3
2
2
dB
dB
dB
Type KST5086 KST5087
Mark 2P 2Q
KST5086/5087
Low Noise Transistor
2P
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3