Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST4401
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 60 V
V
CEO
Collector-Emitter Voltage 40 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 600 mA
P
C
Collector Dissipation 350 mW
T
STG
Storage Temperature 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=100µA, I
E
=0 60 V
BV
CEO
* Collector-Emitter Breakdown Voltage I
C
=1.0mA, I
B
=0 40 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=100µA, I
C
=0 6 V
I
BEV
Base Cut-off Current V
CE
=35V, V
EB
=0.4V 100 nA
I
CEX
Collector Cut-off Current V
CE
=35V, V
EB
=0.4V 100 nA
h
FE
* DC Current Gain V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=150mA
V
CE
=2V, I
C
=500mA
20
40
80
100
40
300
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
0.4
0.75
V
V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
0.75 0.95
1.2
V
V
f
T
Current Gain Bandwidth Product I
C
=20mA, V
CE
=10V
f=100MHz
250 MHz
C
ob
Output Capacitance V
CB
=5V, I
E
=0, f=100KHz 6.5 pF
t
ON
Turn On Time V
CC
=30V, V
BE
=2V
I
C
=150mA, I
B1
=15mA
35 ns
t
OFF
Turn Off Time V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
255 ns
KST4401
Switching Transistor
2X
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3