Datasheet

KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSH44H11 / KSH44H11I Rev. 1.1.0 2
Electrical Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Conditions Min. Typ. Max. Unit
V
CEO
(sus)
Collector-Emitter Sustaining
Voltage
(1)
I
C
= 30 mA, I
B
= 0 80 V
I
CEO
Collector Cut-Off Current V
CE
= 80 V, I
B
= 0 10 μA
I
EBO
Emitter Cut-Off Current V
BE
= 5 V, I
C
= 0 50 μA
h
FE
DC Current Gain
V
CE
= 1 V, I
C
= 2 A 60
V
CE
= 1 V, I
C
= 4 A 40
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 8 A, I
B
= 0.4 A 1 V
V
BE
(on) Base-Emitter Saturation Voltage I
C
= 8 A, I
B
= 0.8 A 1.5 V
f
T
Current Gain Bandwidth Product V
CE
= 10 A, I
C
= 0.5 A 50 MHz
C
ob
Output Capacitance V
CB
= 10 V, f = 1 MHz 130 pF
t
ON
Turn-On Time
I
C
= 5 A
I
B1
= -I
B2
= - 0.5 A
300 ns
t
STG
Storage Time 500 ns
t
F
Fall Time 140 ns