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KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor

KSH44H11 / KSH44H11I Rev. 1.1.0 1

November 2013

KSH44H11 / KSH44H11I

NPN Epitaxial Silicon Transistor

Features

• Lead Formed for Surface Mount Application (No Suffix)

• Straight Lead (I-PAK, “- I” Suffix)

• Electrically Similar to Popular KSE44H

• Fast Switching Speeds

• Low Collector-Emitter Saturation Voltage

Applications

• Switching Regulators

• Converters

• Power Amplifiers

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

KSH44H11TF KSH44H11 TO-252 3L (DPAK) Tape and Reel

KSH44H11TM KSH44H11 TO-252 3L (DPAK) Tape and Reel

KSH44H11ITU KSH44H11-I TO-251 3L (IPAK) Rail

Symbol Parameter Value Unit

CEO

Collector-Emitter Voltage 80 V

EBO

Emitter-Base Voltage 5 V

Collector Current (DC) 8 A

Collector Current (Pulse) 16 A

Collector Dissipation (T

= 25°C) 20.00

Collector Dissipation (T

= 25°C) 1.75

Junction Temperature 150 °C

STG

Storage Temperature -65 to 150 °C

Description

Designed for general-purpose power and switching, such

as output or driver stages in applications.

1.Base 2.Collector 3.Emitter

D-PAK I-PAK

Summary of content (6 pages)

PAGE 1
KSH44H11 / KSH44H11I NPN Epitaxial Silicon Transistor Features Description • • • • • Designed for general-purpose power and switching, such as output or driver stages in applications. Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular KSE44H Fast Switching Speeds Low Collector-Emitter Saturation Voltage Applications • Switching Regulators • Converters • Power Amplifiers D-PAK 1 1.Base I-PAK 1 2.Collector 3.
PAGE 2
Values are at TC = 25°C unless otherwise noted. Symbol Parameter Conditions Collector-Emitter Sustaining Voltage(1) IC = 30 mA, IB = 0 ICEO Collector Cut-Off Current VCE = 80 V, IB = 0 IEBO Emitter Cut-Off Current VCEO(sus) hFE DC Current Gain Min. Typ. 80 60 VCE = 1 V, IC = 4 A 40 Collector-Emitter Saturation Voltage IC = 8 A, IB = 0.4 A VBE(on) Base-Emitter Saturation Voltage IC = 8 A, IB = 0.8 A fT Unit V VBE = 5 V, IC = 0 VCE = 1 V, IC = 2 A VCE(sat) Max.
PAGE 3
100 1000 IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN VCE = 1V 100 10 ICP(max) 10 0μ s 50 0μ s 10 IC(max) 1m s 5m s DC 1 0.1 0.01 1 0.01 0.1 1 1 10 IC[A], COLLECTOR CURRENT 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. DC Current Gain Figure 2. Safe Operating Area PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 3. Power Derating © 2002 Fairchild Semiconductor Corporation KSH44H11 / KSH44H11I Rev. 1.
PAGE 4
KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor Physical Dimensions TO-252 3L Figure 4. 3-LEAD, TO-252, JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK) (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 5
KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor Physical Dimensions (Continued) TO-251 3L D) TO251A03REVA. Figure 5. TO-251 (IPAK) MOLDED, 3-LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 6
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