Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
KSH42C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -100 V
V
CEO
Collector-Emitter Voltage -100 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -6 A
I
CP
Collector Current (Pulse) -10 A
I
B
Base Current -2 A
P
C
Collector Dissipation (T
C
=25°C) 20 W
Collector Dissipation (T
a
=25°C) 1.75 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage I
C
= - 30mA, I
B
= 0 -100 V
I
CEO
Collector Cut-off Current V
CE
= -60V, I
B
= 0 -50 µA
I
CES
Collector Cut-off Current V
CE
= -100V, V
BE
= 0 -10 µA
I
EBO
Emitter Cut-off Current V
BE
= -5V, I
C
= 0 -0.5 mA
h
FE
* DC Current Gain V
CE
= -4V, I
C
= -0.3A
V
CE
= -4V, I
C
= -3A
30
15 75
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= -6A, I
B
= -600mA -1.5 V
V
BE
(on) * Base-Emitter On Voltage V
CE
= -6A, I
C
= -4A -2 V
f
T
Current Gain Bandwidth Product V
CE
= -10V, I
C
= -500mA 3 MHz
KSH42C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP42C
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
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