Datasheet

©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002
KSH31/31C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: KSH31
: KSH31C
40
100
V
V
V
CEO
Collector-Emitter Voltage
: KSH31
: KSH31C
40
100
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 3 A
I
CP
Collector Current (Pulse) 5 A
I
B
Base Current 1 A
P
C
Collector Dissipation (T
C
=25°C) 15 W
Collector Dissipation (T
a
=25°C) 1.56 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: KSH31
: KSH31C
I
C
= 30mA, I
B
= 0 40
100
V
V
I
CEO
Collector Cut-off Current
: KSH31
: KSH31C
V
CE
= 40V, I
B
= 0
V
CE
= 60V, I
B
= 0
50
50
µA
µA
I
CES
Collector Cut-off Current
: KSH31
: KSH31C
V
CE
= 40V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
20
20
µA
µA
I
EBO
Emitter Cut-off Current V
BE
= 5V, I
C
= 0 1 mA
h
FE
* DC Current Gain V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
25
10 50
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 3A, I
B
= 375mA 1.2 V
V
BE
(on) * Base-Emitter On Voltage V
CE
= 4A, I
C
= 3A 1.8 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 500mA 3 MHz
KSH31/31C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
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