Datasheet

KSD882 — NPN Epitaxial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSD882 Rev. B 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Current Gain Bandwidth Product
Figure 5. Collector Output Capacitance Figure 6. Safe Operating Area
048121620
0.0
0.4
0.8
1.2
1.6
2.0
I
B
= 2mA
I
B
= 1mA
I
B
= 3mA
I
B
= 4mA
I
B
= 5mA
I
B
= 6mA
I
B
= 9mA
I
B
= 8mA
I
B
= 10mA
I
B
= 7mA
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1E-3 0.01 0.1 1 10
10
100
1000
V
CE
= 2V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
1E-3
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
0.01 0.1 1
1
10
100
1000
V
CE
= 5V
f
T
(MHz), CURRENT GAIN BANDWIDTH PRODUCT
I
C
[A], COLLECTOR CURRENT
110100
10
100
1000
I
E
=0
f=1MHz
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
1 10 100
0.01
0.1
1
10
S
/
b
Li
mited
D
i
s
s
i
p
a
t
i
o
n
L
i
m
i
t
e
d
1
m
s
10m
s
100
µs
I
C
MAX. (pulse)
I
C
MAX. (DC)
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE