Datasheet

KSD882 — NPN Epitaxial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSD882 Rev. B 1
November 2007
KSD882
NPN Epitaxial Silicon Transistor
Recommended Applications
• Audio Frequency Power Amplifier
Featuers
• Low Speed Switcing
• Complement to KSB772.
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** PW≤10ms, Duty Cycle≤50%
Electrical Characteristics. T
a
=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
Symbol Parameter Ratings Units
BV
CBO
Collector-Base Voltage 40 V
BV
CEO
Collector-Emitter Voltage 30 V
BV
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current(DC) 3 A
I
C
Collector Current(Pulse)** 7 A
I
B
Base Current 0.6 A
P
D
Total Device Dissipation(T
C
=25°C)
Total Device Dissipation(T
a
=25°C)
10
1
W
W
T
J
, T
STG
Junction and Storage Temperature - 55 ~ +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=500uA, I
E
=0 40 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=5mA, I
B
=0 30 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=500uA, I
C
=0 5 V
I
CBO
Collector Cut-off Current V
CB
= 30V, I
E
= 0 1 µA
I
EBO
Emitter Cut-off Current V
EB
= 3V, I
C
= 0 1 µA
h
FE1
h
FE2
*DC Current Gain V
CE
= 2V, I
C
= 20mA
V
CE
= 2V, I
C
= 1A
30
60
150
160 400
V
CE
(sat) *Collector-Emitter Saturation Voltage I
C
= 2A, I
B
= 0.2A 0.3 0.5 V
V
BE
(sat) *Base-Emitter Saturation Voltage I
C
= 2A, I
B
= 0.2A 1.0 2.0 V
f
T
Current Gain Bandwidth Product V
CE
= 5V, I
E
= 0.1A 90 MHz
C
ob
Output Capacitance V
CB
= 10V, I
E
= 0
f = 1MHz
45 pF
1
TO-126
1. Emitter 2.Collector 3.Base