Datasheet

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
KSD526 Rev. A1
KSD526 NPN Epitaxial Silicon Transistor
April 2006
KSD526
NPN Epitaxial Silicon Transistor
Power Amplifier Applications
• Complement to KSB596
1.Base 2.Collector 3.Emitter
1
TO-220
Absolute Maximum Ratings * T
a
= 25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 80 V
V
CEO
Collector-Emitter Voltage 80 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 4 A
I
B
Base Current 0.4 A
P
C
Collector Dissipation ( T
C
=25°C) 30 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55~150 °C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Electrical Characteristics T
C
= 25°C unless otherwise noted
Symbol Parameter Test Condition MIN MAX MAX Units
I
CBO
Collector Cut-off Current V
CB
= 80V, I
E
= 0 30 μA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 100 μA
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 50mA, I
B
= 0 80 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 10mA, I
C
= 0 5 V
hFE DC Current Gain V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 3A
40
15 50
240
VCE(sat) Collector-Emitter Saturation Voltage I
C
= 3A, I
B
= 0.3A 0.45 1.5 V
VBE(on) Base-Emitter On Voltage V
CE
= 5V, I
C
= 3A 1 1.5 V
fT Current Gain - Bandwidth Product V
CE
= 5V, I
C
= 0.5A 3 8 MHz
Ccb Collector Output Capacitance V
CB
= 10V, I
E
= 0, f = 1MHz 90 pF
h
FE
Classification
Classification R O Y
h
FE
40∼80 70∼140 120∼240