Datasheet

©2000 Fairchild Semiconductor International Rev. A, February 2000
KSD2012
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 60 V
V
CEO
Collector-Emitter Voltage 60 V
V
EBO
Emitter-Base Voltage 7 V
I
C
Collector Current 3 A
I
B
Base Current 0.3 A
P
C
Collector Power Dissipation (T
C
=25°C) 25 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 50mA, I
B
= 0 60 V
I
CBO
Collector Cut-off Current V
CB
= 60V, I
E
= 0 100 µA
I
EBO
Emitter Cut-off Current V
EB
= 7V, I
C
= 0 10 µA
h
FE1
h
FE2
DC Current Gain V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 3A
100
20
320
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 2A, I
B
= 0.2A 0.4 1 V
V
BE
(on) Base-Emitter ON Voltage V
CE
= 5V, I
C
= 0.5A 0.7 1 V
f
T
Current Gain Bandwidth Product V
CE
= 5V, I
C
= 0.5A 3 MHz
Classification Y G
h
FE1
100 ~ 200 150 ~ 320
KSD2012
Low Frequency Power Amplifier
• Complement to KSB1366
1
1.Base 2.Collector 3.Emitter
TO-220F