Datasheet

KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5338D/KSC5338DW Rev. B1 6
Typical Characteristics (Continued)
Figure 13. Inductive Fall Time Figure 14. Safe Operating Area
Figure 15. Reverse Bias Safe Operating Figure 16. Power Derating
Figure 17. RBSOA Saturation
2 4 6 8 10 12 14 16 18 20
0
200
400
600
800
1000
I
Bon
= I
Boff
V
CC
= 15V
V
Z
= 300V
L
C
= 200µH
I
C
= 2A @ T
J
=125
o
C
I
C
= 2A @ T
J
=25
o
C
I
C
= 1A @ T
J
=125
o
C
I
C
= 1A @ T
J
=25
o
C
t
F
[ns], FALL TIME
h
FE
, FORCED GAIN
10 100 1000
0.01
0.1
1
10
100
DC
5ms
1ms
1µs
10µS
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
200 300 400 500 600 700 800 900 1000 1100
0
1
2
3
4
5
6
7
8
-5V
Vcc = 50V
V
BE
(off) = -5V
L
C
= 1mH
Ic = 4 Ib
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
25
50
75
100
P
C
[W], POWER DISSIPATION
T
C
[
O
C], CASE TEMPERATURE
012345678910
0
1
2
3
4
5
6
Ic = 3.3 Ib
Ic = 4 Ib
Ic = 2.2 Ib
Ic = 5 Ib
Vcc = 50V
V
BE
(off) = -5V
L
C
= 1mH
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
CE
[A], COLLECTOR CURRENT