Datasheet

KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5338D/KSC5338DW Rev. B1 5
Typical Characteristics (Continued)
Figure 7. Base-Emitter Saturation Voltage Figure 8. Collector Output Capacitance
Figure 9. Forward Recovery Time Figure 10. Switching Time
Figure 11. Induction Storage Time Figure 12. Inductive Crossover Time
1E-3 0.01 0.1 1 10
0.1
1
10
T
J
= +25
o
C
T
J
= 125
o
C
I
C
= 10I
B
T
J
= -25
o
C
V
BE
(sat)[V], BASE-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
1 10 100
10
100
1000
2000
C
ib
C
ob
f = 1MHz
C
ob
, C
ib
[pF], CAPACITANCE
REVERSE VOLTAGE [V]
0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
250
300
350
400
450
500
di/dt = 10A/µS
T
C
= 25
o
C
t
fr
,[ns], FORWARD RECOVERY TIME
I
F
[A], FORWARD CURRENT
110
0.01
0.1
1
10
0.2
t
STG
t
F
V
CC
= 250V
I
C
= 5I
B1
= 2.5I
B2
t
STG
, t
F
[ns], SWITCHING TIME
I
C
[A], COLLECTOR CURRENT
05101520
2
3
4
5
I
Bon
= I
Boff
V
CC
= 15V
V
Z
= 300V
L
C
= 200µH
I
C
= 2A @ T
J
=125
o
C
I
C
= 2A @ T
J
=25
o
C
I
C
= 1A @ T
J
=125
o
C
I
C
= 1A @ T
J
=25
o
C
t
STG
[µs], STORAGE TIME
h
FE
, FORCED GAIN
2 4 6 8 101214161820
0
500
1000
1500
2000
I
Bon
= I
Boff
V
CC
= 15V
V
Z
= 300V
L
C
= 200µH
I
C
= 2A @ T
J
=125
o
C
I
C
= 2A @ T
J
=25
o
C
I
C
= 1A @ T
J
=125
o
C
I
C
= 1A @ T
J
=25
o
C
t
C
[ns], CROSSOVER TIME
h
FE
, FORCED GAIN