Datasheet

KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5338D/KSC5338DW Rev. B1 4
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage
0246810
0
1
2
3
4
5
0.9A
0.8A
0.7A
0.6A
0.5A
0.4A
0.3A
0.2A
I
B
= 0
I
B
= 1A
I
B
= 0.1A
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01 0.1 1 10
1
10
100
T
J
= +25
o
C
T
J
= 125
o
C
V
CE
= 1V
T
J
= -25
o
C
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
0.01 0.1 1 10
1
10
100
T
J
= +25
o
C
T
J
= 125
o
C
V
CE
= 5V
T
J
= -25
o
C
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.1
1
10
T
J
= +25
O
C
T
J
= 125
o
C
I
C
= 5I
B
T
J
= -25
o
C
V
CE
(sat)[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.1
1
10
T
J
= +25
o
C
T
J
= 125
o
C
I
C
= 10I
B
T
J
= -25
o
C
V
CE
(sat)[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.1
1
10
T
J
= +25
o
C
T
J
= 125
o
C
I
C
= 5I
B
T
J
= -25
o
C
V
BE
(sat)[V], BASE-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT