Datasheet

KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5338D/KSC5338DW Rev. B1 3
Electrical Characteristics (Continued) T
a
=25°C unless otherwise noted
Symbol Parameter Test Condition Min Typ. Max. Units
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40µs)
t
ON
Turn On Time I
C
=2.5A, I
B1
=500mA,
I
B2
=-1A, V
CC
=250V, R
L
= 100Ω
500 750 ns
t
STG
Storage Time 1.2 1.5 µs
t
F
Fall Time 100 200 ns
t
ON
Turn On Time I
C
=2A,
I
B1
=400mA,
I
B2
=-1A,
V
CC
=300V,
R
L
= 150Ω
T
a
=25°C100150ns
T
a
=125°C150 ns
t
STG
Storage Time T
a
=25°C1.42.2µs
T
a
=125°C1.7 µs
t
F
Fall Time T
a
=25°C90150ns
T
a
=125°C150 ns
t
ON
Turn On Time I
C
=2.5A,
I
B1
=500mA,
I
B2
=-5mA,
V
CC
=300V,
R
L
= 120Ω
T
a
=25°C120150ns
T
a
=125°C150 ns
t
STG
Storage Time T
a
=25°C1.8 2.1µs
T
a
=125°C2.6 µs
t
F
Fall Time T
a
=25°C 110 150 ns
T
a
=125°C160 ns
INDUCTIVE LOAD SWITCHING (V
CC
=15V)
t
STG
Storage Time I
C
=2.5A,
I
B1
=500mA,
I
B2
=-0.5A,
V
Z
=350V,
L
C
=300µH
T
a
=25°C1.92.2µs
T
a
=125°C2.4 µs
t
F
Fall Time T
a
=25°C160200ns
T
a
=125°C330 ns
t
C
Cross-over Time T
a
=25°C350500ns
T
a
=125°C750 ns
t
STG
Storage Time I
C
=2A,
I
B1
=400mA,
I
B2
=-0.4A,
V
Z
=300V,
L
C
=200µH
T
a
=25°C1.95 2.25µs
T
a
=125°C2.9 µs
t
F
Fall Time T
a
=25°C120150ns
T
a
=125°C270 ns
t
C
Cross-over Time T
a
=25°C300450ns
T
a
=125°C700 ns
t
STG
Storage Time I
C
=1A,
I
B1
=100mA,
I
B2
=-0.5A,
V
Z
=300V,
L
C
=200µH
T
a
=25°C0.60.8µs
T
a
=125°C1.0 µs
t
F
Fall Time T
a
=25°C70ns
T
a
=125°C 110 ns
t
C
Cross-over Time T
a
=25°C80130ns
T
a
=125°C170 ns