Datasheet

KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC5338D/KSC5338DW Rev. B1 2
Electrical Characteristics T
a
=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=1mA, I
E
=0 1000 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=5mA, I
B
=0 450 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=1mA, I
C
=0 12 V
I
CBO
Collector Cut-off Current V
CB
=800V, I
E
=0 10 µA
I
CES
Collector Cut-off Current V
CES
=1000V, I
EB
=0 T
a
=25°C100µA
T
a
=125°C500µA
I
CEO
Collector Cut-off Current V
CE
=450V, I
B
=0 T
a
=25°C100µA
T
a
=125°C500µA
I
EBO
Emitter Cut-off Current V
EB
=10V, I
C
=0 10 µA
h
FE
DC Current Gain V
CE
=1V, I
C
=0.8A T
a
=25°C1525
T
a
=125°C10 14
V
CE
=1V, I
C
=2A T
a
=25°C69
T
a
=125°C4 6
V
CE
=2.5V, I
C
=1A T
a
=25°C1825
T
a
=125°C14 18
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=0.8A, I
B
=0.08A T
a
=25°C0.350.5V
T
a
=125°C 0.55 0.75 V
I
C
=2A, I
B
=0.4A T
a
=25°C 0.47 0.75 V
T
a
=125°C0.91.1V
I
C
=0.8A, I
B
=0.04A T
a
=25°C0.91.5V
T
a
=125°C1.82.5V
I
C
=1A, I
B
=0.2A T
a
=25°C0.220.5V
T
a
=125°C0.30.6V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
=0.8A, I
B
=0.08A T
a
=25°C0.81.0V
T
a
=125°C0.650.9V
I
C
=2A, I
B
=0.4A T
a
=25°C0.91.0V
T
a
=125°C0.80.9V
C
ib
Input Capacitance V
EB
=10V, I
C
=0.5A, f=1MHz 550 750 pF
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 60 100 pF
f
T
Current Gain Bandwidth Product I
C
=0.5A,V
CE
=10V 11 MHz
V
F
Diode Forward Voltage I
F
=1A, I
C
=1mA,
I
E
=0
T
a
=25°C0.861.3V
T
a
=125°C0.79 V
I
F
=2A T
a
=25°C0.951.5V
T
a
=125°C0.88 V
t
fr
Diode Forward Recovery Time
(di/dt=10A/µs)
I
F
=0.4A
I
F
=1A
I
F
=2A
460
360
325
ns
ns
ns
V
CE(DSAT)
Dynamic Saturation Voltage I
C
=1A, I
B1
=100mA
V
CC
=300V at 1 µs
T
a
=25°C8 V
T
a
=125°C15 V
I
C
=1A, I
B1
=100mA
V
CC
=300V at 3 µs
T
a
=25°C2.9 V
T
a
=125°C8 V
I
C
=2A, I
B1
=400mA
V
CC
=300V at 1 µs
T
a
=25°C9 V
T
a
=125°C17 V
I
C
=2A, I
B1
=400mA
V
CC
=300V at 3 µs
T
a
=25°C1.9 V
T
a
=125°C8.5 V