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KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor

KSC5338D/KSC5338DW Rev. B1 1

May 2010

KSC5338D/KSC5338DW

NPN Triple Diffused Planar Silicon Transistor

Features

• High Voltage Power Switch Switching Application

• Wide Safe Operating Area

• Built-in Free-Wheeling Diode

• Suitable for Electronic Ballast Application

• Small Variance in Storage Time

• Two Package Choices : TO-220 or D

-PAK

Absolute Maximum Ratings T

=25°C unless otherwise noted

* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%

Thermal Characteristics

Symbol Parameter Value Units

CBO

Collector-Base Voltage 1000 V

CEO

Collector-Emitter Voltage 450 V

EBO

Emitter-Base Voltage 12 V

Collector Current (DC) 5 A

*Collector Current (Pulse) 10 A

Base Current (DC) 2 A

*Base Current (Pulse) 4 A

Power Dissipation (T

=25°C) 75 W

Junction Temperature 150 °C

STG

Storage Temperature - 55 to 150 °C

Symbol Parameter Rating Units

θjc

Thermal Resistance

Junction to Case 1.65 °C/W

θja

Junction to Ambient 62.5 °C/W

Maximum Lead Temperature for Soldering 270 °C

Equivalent Circuit

-PAK

TO-220

1.Base 2.Collector 3.Emitter

Summary of content (8 pages)

PAGE 1
KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : TO-220 or D2-PAK Equivalent Circuit D2-PAK C 1 B TO-220 E 1 1.Base 2.Collector Absolute Maximum Ratings 3.
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Symbol Ta=25°C unless otherwise noted Parameter Test Condition Min. Typ. Max.
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Symbol Parameter Test Condition Min Typ. Max. Units 500 750 ns 1.5 µs 100 200 ns 150 ns 2.2 µs RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40µs) tON Turn On Time tSTG Storage Time tF tON tSTG tF 1.2 Fall Time Turn On Time Storage Time Fall Time tON Turn On Time tSTG Storage Time tF IC=2.5A, IB1=500mA, IB2=-1A, VCC=250V, RL = 100Ω Fall Time IC=2A, IB1=400mA, IB2=-1A, VCC=300V, RL = 150Ω IC=2.
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100 IB = 1A 0.9A 0.8A 0.7A 0.6A 0.5A 0.4A 4 0.3A 3 0.2A 2 IB = 0.1A o TJ = -25 C 10 o TJ = 125 C 1 0 IB = 0 0 2 4 6 8 1 0.01 10 0.1 VCE = 5V o hFE, DC CURRENT GAIN TJ = +25 C o TJ = -25 C 10 o TJ = 125 C 1 0.01 0.1 1 10 IC = 5IB o TJ = 125 C 1 O TJ = +25 C o TJ = -25 C 0.1 1E-3 10 0.01 IC[A], COLLECTOR CURRENT 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4.
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(Continued) 2000 IC = 10IB f = 1MHz 1000 1 Cob, Cib[pF], CAPACITANCE VBE(sat)[V], BASE-EMITTER VOLTAGE 10 o TJ = -25 C o TJ = 125 C o TJ = +25 C 0.1 1E-3 0.01 0.1 1 Cib 100 Cob 10 10 1 10 IC[A], COLLECTOR CURRENT REVERSE VOLTAGE [V] Figure 7. Base-Emitter Saturation Voltage Figure 8. Collector Output Capacitance 10 di/dt = 10A/µS VCC = 250V IC = 5IB1 = 2.5IB2 o TC = 25 C 450 tSTG, tF[ns], SWITCHING TIME tfr,[ns], FORWARD RECOVERY TIME 500 400 350 300 250 0.25 0.50 0.
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(Continued) 1000 o IC = 2A @ TJ=125 C IC[A], COLLECTOR CURRENT 800 tF[ns], FALL TIME 100 IBon = IBoff VCC = 15V VZ = 300V LC = 200µH 600 o IC = 1A @ TJ=125 C 400 o IC = 2A @ TJ=25 C 200 10 1µs 10µS 5ms 1ms 1 DC 0.1 o IC = 1A @ TJ=25 C 0 2 4 6 8 10 12 14 16 18 0.01 10 20 100 hFE, FORCED GAIN VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 13. Inductive Fall Time Figure 14.
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KSC5338D/KSC5338DW — NPN Triple Diffused Planar Silicon Transistor Physical Dimensions TO-220 Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation KSC5338D/KSC5338DW Rev. B1 www.fairchildsemi.
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