Datasheet

2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC3503/KSC3503 Rev. A1 4
Typical Characteristics (Continued)
Figure 7. Reverse Transfer Capacitance Figure 8. Current Gain Gandwidth Product
Figure 9. Safe Operating Area Figure 10. Power Derating
0.1 1 10 100 1000
0.1
1
10
100
f=1MHz
C
re
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100 1000
1
10
100
1000
V
CE
= 30V
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT
1 10 100 1000
1
10
100
1000
D
C
(
T
a
=
2
5
o
C
)
5
0
0
µ
s
10ms
1ms
D
C
(
T
c
=
2
5
o
C
)
I
C
MAX. (Pulse)
I
C
MAX.
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
T
C
=125
o
C
T
c
=25
o
C
P
C
[W], POWER DISSIPATION
T[
o
C], TEMPERATURE