Datasheet

2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC3503/KSC3503 Rev. A1 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Static Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance
0246810
0
4
8
12
16
20
I
B
=
1
2
0
µ
A
I
B
=
1
0
0
µ
A
I
B
=
8
0
µ
A
I
B
=
6
0
µ A
I
B
=
4
0
µ
A
I
B
=
2
0
µ
A
I
B
= 0
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 20406080100
0
2
4
6
8
10
I
B
=
6
0
µ A
I
B
=
5
0
µ
A
I
B
=
4
0
µ A
I
B
=
3
0
µ
A
I
B
=
2
0
µ
A
I
B
=
1
0
µ
A
I
B
= 0
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10 100 1000
1
10
100
1000
V
CE
= 10V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
0.00.20.40.60.81.01.2
0
20
40
60
80
100
120
140
160
V
CE
= 10V
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
0.1 1 10 100 1000
0.1
1
10
100
f = 1MHz
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE