Datasheet

2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC3503/KSC3503 Rev. A1 2
Electrical Characteristics* T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Ordering Information
* 1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package.
2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method.
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= 10µA, I
E
= 0 300 V
BV
CEO
Collecto- Emitter Breakdown Voltage I
C
= 1mA, I
B
= 0 300 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 5 V
I
CBO
Collector Cut-off Current V
CB
= 200V, I
E
= 0 0.1 µA
I
EBO
Emitter Cut-off Current V
EB
= 4V, I
C
= 0 0.1 µA
h
FE
DC Current Gain V
CE
= 10V, I
C
= 10mA 40 320
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 20mA, I
B
= 2mA 0.6 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 20mA, I
B
= 2mA 1 V
f
T
Current Gain Bandwidth Product V
CE
= 30V, I
C
= 10mA 150 MHz
C
ob
Output Capacitance V
CB
= 30V, f = 1MHz 2.6 pF
C
re
Reverse Transfer Capacitance V
CB
= 30V, f = 1MHz 1.8 pF
Part Number* Marking Package Packing Method Remarks
2SC3503CSTU 2SC3503C TO-126 TUBE hFE1 C grade
2SC3503DSTU 2SC3503D TO-126 TUBE hFE1 D grade
2SC3503ESTU 2SC3503E TO-126 TUBE hFE1 E grade
2SC3503FSTU 2SC3503F TO-126 TUBE hFE1 F grade
KSC3503CSTU C3503C TO-126 TUBE hFE1 C grade
KSC3503DSTU C3503D TO-126 TUBE hFE1 D grade
KSC3503ESTU C3503E TO-126 TUBE hFE1 E grade
KSC3503FSTU C3503F TO-126 TUBE hFE1 F grade