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2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor

2SC3503/KSC3503 Rev. A1 1

March 2008

2SC3503/KSC3503

NPN Epitaxial Silicon Transistor

Applications

• Audio, Voltage Amplifier and Current Source

• CRT Display, Video Output

• General Purpose Amplifier

Features

• High Voltage : V

CEO

= 300V

• Low Reverse Transfer Capacitance : C

= 1.8pF at V

= 30V

• Excellent Gain Linearity for low THD

• High Frequency: 150MHz

• Full thermal and electrical Spice models are available

• Complement to 2SA1381/KSA1381.

Absolute Maximum Ratings* T

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* T

=25°C unless otherwise noted

* Device mounted on minimum pad size

Classification

Symbol Parameter Ratings Units

CBO

Collector-Base Voltage 300 V

CEO

Collector-Emitter Voltage 300 V

EBO

Emitter-Base Voltage 5 V

Collector Current(DC) 100 mA

Collector Current(Pulse) 200 mA

Total Device Dissipation, T

=25°C

=125°C

1.2

, T

STG

Junction and Storage Temperature - 55 ~ +150 °C

Symbol Parameter Max. Units

θJC

Thermal Resistance, Junction to Case 17.8 °C/W

Classification

CDEF

40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320

TO-126

1. Emitter 2.Collector 3.Base

Summary of content (6 pages)

PAGE 1
2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Applications • Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier Features • • • • • • High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V Excellent Gain Linearity for low THD High Frequency: 150MHz Full thermal and electrical Spice models are available Complement to 2SA1381/KSA1381. Absolute Maximum Ratings* Symbol TO-126 1 1. Emitter 2.Collector 3.
PAGE 2
Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 300 V BVCEO Collecto- Emitter Breakdown Voltage IC = 1mA, IB = 0 300 V BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5 V ICBO Collector Cut-off Current VCB = 200V, IE = 0 0.1 µA IEBO Emitter Cut-off Current VEB = 4V, IC = 0 0.1 µA hFE DC Current Gain VCE = 10V, IC = 10mA VCE(sat) Collector-Emitter Saturation Voltage IC = 20mA, IB = 2mA 0.
PAGE 3
10 IB = 120µA IB = 60µA IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT 20 IB = 100µA 16 IB = 80µA 12 IB = 60µA 8 IB = 40µA IB = 20µA 4 IB = 50µA 8 IB = 40µA 6 IB = 30µA 4 IB = 20µA 2 IB = 10µA IB = 0 IB = 0 0 0 0 2 4 6 8 10 0 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 10V 100 10 10 100 60 80 100 Figure 2. Static Characteristic 1000 1 40 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1.
PAGE 4
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 100 Cre[pF], CAPACITANCE f=1MHz 10 1 0.1 0.1 1 10 100 1000 1000 VCE = 30V 100 10 1 0.1 1 10 100 1000 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 7. Reverse Transfer Capacitance Figure 8. Current Gain Gandwidth Product 1000 8 PC[W], POWER DISSIPATION 0 50 µs IC MAX. 100 DC c o 25 C) 10 = 25 (T a = D C (T IC[mA], COLLECTOR CURRENT 7 IC MAX.
PAGE 5
2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor Package Dimensions 8.00 ±0.30 ±0.20 3.25 ±0.20 ø3.20 ±0.10 11.00 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 1.75 ±0.20 13.06 0.75 ±0.10 16.10 ±0.30 ±0.20 1.60 ±0.10 #1 2.28TYP [2.28±0.20] +0.10 0.50 –0.05 2.28TYP [2.28±0.20] Dimensions in Millimeters © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 www.fairchildsemi.
PAGE 6
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